JANTX2N3055

NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR

The three terminals of this NPN GP BJT from give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 6000 mW. It has a maximum collector emitter voltage of 70 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.