TK20E60U

TOSHIBA  TK20E60U  功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.19 ohm, 10 V, 3 V

The is a N-channel enhancement-mode Silicon MOSFET suitable for switching regulator applications.

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Low drain-source ON resistance

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High forward transfer admittance

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Low leakage current

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Enhancement-mode

Using continuously under heavy loads may cause this product to decrease in the reliability significantly even if the operating conditions are within the absolute maximum ratings.