BSC030P03NS3GAUMA1

INFINEON  BSC030P03NS3GAUMA1  晶体管 双极预偏置/数字, BRT, TDSON

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

得捷:
MOSFET P-CH 30V 25.4/100A 8TDSON

立创商城:
P沟道 30V 25.4A 100A

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET BSC030P03NS3GAUMA1, 100 A, Vds=30 V, 8引脚 TDSON封装

贸泽:
MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3

e络盟:
晶体管, MOSFET, BRT, P沟道, -100 A, -30 V, 0.0023 ohm, -10 V, -2.5 V

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; BSC030P03NS3GAUMA1 power MOSFET. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

安富利:
Trans MOSFET P-CH 30V 25.4A 8-Pin TDSON T/R

TME:
Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8

Verical:
Trans MOSFET P-CH 30V 25.4A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC030P03NS3GAUMA1  Bipolar Pre-Biased / Digital Transistor, BRT, TDSON