RM25C512C-LSNI-B

RM25C512C 系列 3.6 V 512 kb 20 MHz 非易失性 串行 存储器 - SOIC-8N

CBRAM Memory IC 512kb 128B Page Size SPI 20MHz 8-SOIC

得捷:
IC CBRAM 512KBIT SPI 20MHZ 8SOIC

贸泽:
EEPROM 512K 1.65V EEPROM

e络盟:
EEPROM, 512 Kbit, 512 x 128Byte, 串行SPI, 20 MHz, WSOIC, 8 引脚

艾睿:
EEPROM Serial-SPI 512K-bit 512Pages x 128 1.8V/2.5V/3.3V 8-Pin SOIC N Tube

富昌:
RM25C512C Series 3.6 V 512 kb 20 MHz Non-Volatile Serial Memory - SOIC-8N

TME:
Memory; EEPROM; SPI; 1.65÷3.6V; 20MHz; SO8; Package: tube; CBRAM®

Verical:
EEPROM Serial-SPI 512K-bit 512Pages x 128 1.8V/2.5V/3.3V 8-Pin SOIC N Tube