N-channel enhancement mode field-effect transistor
Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability: in SOT23.
Features
TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | SI2302DS | Philips 飞利浦 | |
 | SI2304DS,215 | NXP 恩智浦 | |
 | SI2303-TP | Micro Commercial Components 美微科 | |
 | SI2304-TP | Micro Commercial Components 美微科 | |
 | SI2301-TP | Micro Commercial Components 美微科 | |
 | SI2302-TP | Micro Commercial Components 美微科 | |
 | SI2302DDS-T1-GE3 | Vishay Semiconductor 威世 | |
 | SI2374DS-T1-GE3 | Vishay Semiconductor 威世 | |
 | SI2305DS-T1-GE3 | Vishay Semiconductor 威世 | |
 | SI2308DS-T1-GE3 | Vishay Semiconductor 威世 | |
 | SI2341DS-T1 | Vishay Semiconductor 威世 |
