锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

GAL18V10B-10LP

SPLD GAL Family 10 Macro Cells 105MHz 5V 20Pin PDIP

Description

The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable E2 floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar counterparts. The E2 technology offers high speed <100ms erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.

Features

• HIGH PERFORMANCE E2CMOS®TECHNOLOGY

— 7.5 ns Maximum Propagation Delay

— Fmax = 111 MHz

— 5.5 ns Maximum from Clock Input to Data Output

— TTL Compatible 16 mA Outputs

— UltraMOS® Advanced CMOS Technology

• LOW POWER CMOS

— 75 mA Typical Icc

• ACTIVE PULL-UPS ON ALL PINS

• E2CELL TECHNOLOGY

— Reconfigurable Logic

— Reprogrammable Cells

— 100% Tested/100% Yields

— High Speed Electrical Erasure <100ms

— 20 Year Data Retention

• TEN OUTPUT LOGIC MACROCELLS

— Uses Standard 22V10 Macrocell Architecture

— Maximum Flexibility for Complex Logic Designs

• PRELOAD AND POWER-ON RESET OF REGISTERS

— 100% Functional Testability

• APPLICATIONS INCLUDE:

— DMA Control

— State Machine Control

— High Speed Graphics Processing

— Standard Logic Speed Upgrade

• ELECTRONIC SIGNATURE FOR IDENTIFICATION

GAL18V10B-10LP PDF数据文档
图片 型号 厂商 下载
GAL18V10B-10LP Lattice Semiconductor 莱迪思
GAL16V8D-7LJN Lattice Semiconductor 莱迪思
GAL16V8D-15LJN Lattice Semiconductor 莱迪思
GAL16V8D-10QP Lattice Semiconductor 莱迪思
GAL16V8D-10LPI Lattice Semiconductor 莱迪思
GAL16LV8C-15LJ Lattice Semiconductor 莱迪思
GAL16V8D-15QP Lattice Semiconductor 莱迪思
GAL16V8D-15LJ Lattice Semiconductor 莱迪思
GAL16V8D-15QJN Lattice Semiconductor 莱迪思
GAL16LV8D-5LJ Lattice Semiconductor 莱迪思
GAL16V8D-15LPN Lattice Semiconductor 莱迪思