SI2334DS-T1-GE3
VISHAY SI2334DS-T1-GE3 晶体管, MOSFET, N沟道, 4.9 A, 30 V, 0.035 ohm, 4.5 V, 400 mV
The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications.
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- 100% Rg tested
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- -55 to 150°C Operating temperature range
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- Halogen-free
e络盟:
# VISHAY SI2334DS-T1-GE3 晶体管, MOSFET, N沟道, 4.9 A, 30 V, 0.035 ohm, 4.5 V, 400 mV
艾睿:
Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R