IXTN600N04T2

N沟道 40V 600A

N-Channel 40V 600A Tc 940W Tc Chassis Mount SOT-227B

得捷:
MOSFET N-CH 40V 600A SOT227B

立创商城:
N沟道 40V 600A

贸泽:
Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET

艾睿:
Create an effective common drain amplifier using this IXTN600N04T2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 940000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes gigamos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

Chip1Stop:
Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B

Verical:
Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B