2N3737

硅NPN开关晶体管 NPN SILICON SWITCHING TRANSISTOR

Design various electronic circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.