IPD50R650CEATMA1

Infineon CoolMOS CE 系列 Si N沟道 MOSFET IPD50R650CEATMA1, 6.1 A, Vds=550 V, 3引脚 DPAK TO-252封装

CoolMOS™ CE 功率 MOSFET

得捷:
MOSFET N-CH 500V 6.1A TO252-3

欧时:
Infineon CoolMOS CE 系列 Si N沟道 MOSFET IPD50R650CEATMA1, 6.1 A, Vds=550 V, 3引脚 DPAK TO-252封装

贸泽:
MOSFET N-Ch 550V 19A DPAK-2

艾睿:
Trans MOSFET N-CH 500V 6.1A 3-Pin2+Tab DPAK T/R

TME:
Transistor: N-MOSFET; unipolar; 500V; 6.1A; 47W; PG-TO252-3

Verical:
Trans MOSFET N-CH 500V 6.1A 3-Pin2+Tab DPAK T/R

Newark:
MOSFET Transistor, N Channel, 6.1 A, 500 V, 0.59 ohm, 13 V, 3 V