ZXMN6A11G

DIODES INC.  ZXMN6A11G  晶体管, MOSFET, N沟道, 3.8 A, 60 V, 140 mohm, 10 V, 1 V

The is a 60V N-channel Enhancement Mode DMOSFET designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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Fast switching speed

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Low gate drive

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Low input capacitance

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AEC-Q101 qualified

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UL94V-0 Flammability rating