IPD90R1K2C3ATMA1

INFINEON  IPD90R1K2C3ATMA1  功率场效应管, MOSFET, N沟道, 5.1 A, 900 V, 1.2 ohm, 10 V, 3 V

表面贴装型 N 通道 900 V 5.1A（Tc） 83W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 900V 5.1A TO252-3

欧时:
Infineon MOSFET IPD90R1K2C3ATMA1

贸泽:
MOSFET N-Ch 900V 5.1A DPAK-2

艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPD90R1K2C3ATMA1 power MOSFET. Its maximum power dissipation is 83000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 900V 5.1A 3-Pin TO-252 T/R

TME:
Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3

Verical:
Trans MOSFET N-CH 900V 5.1A 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD90R1K2C3ATMA1  Power MOSFET, N Channel, 5.1 A, 900 V, 1.2 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 900V 5.1A TO-252