IXFH58N20
数据手册.pdfIXYS SEMICONDUCTOR IXFH58N20 晶体管, MOSFET, N沟道, 58 A, 200 V, 40 mohm, 10 V, 4 V
通孔 N 通道 200 V 58A（Tc） 300W（Tc） TO-247AD（IXFH）
得捷:
MOSFET N-CH 200V 58A TO247AD
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IXFH58N20 power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 300000 mW. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Chip1Stop:
Trans MOSFET N-CH 200V 58A 3-Pin3+Tab TO-247AD
TME:
Transistor: N-MOSFET; unipolar; 200V; 58A; 300W; TO247
Verical:
Trans MOSFET N-CH 200V 58A 3-Pin3+Tab TO-247AD
Newark:
# IXYS SEMICONDUCTOR IXFH58N20 MOSFET Transistor, N Channel, 58 A, 200 V, 40 mohm, 10 V, 4 V
Online Components:
Trans MOSFET N-CH 200V 58A 3-Pin3+Tab TO-247AD
Win Source:
MOSFET N-CH 200V 58A TO-247AD