IRFI630GPBF
数据手册.pdfVISHAY IRFI630GPBF. 晶体管, MOSFET, N沟道, 5.9 A, 200 V, 400 mohm, 10 V, 4 V
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
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- Isolated package
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- 2.5kVRMS t = 60s, f = 60Hz High voltage isolation
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- 4.8mm Sink to lead creepage distance
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- Dynamic dV/dt rating
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- Low thermal resistance