IPD079N06L3GBTMA1

INFINEON  IPD079N06L3GBTMA1  晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0063 ohm, 10 V, 1.7 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 60V 50A TO252-3

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPD079N06L3GBTMA1, 50 A, Vds=60 V, 3引脚 DPAK TO-252封装

e络盟:
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0063 ohm, 10 V, 1.7 V

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; IPD079N06L3GBTMA1 power MOSFET. Its maximum power dissipation is 79000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.

TME:
Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO252-3

Verical:
Trans MOSFET N-CH 60V 50A 3-Pin2+Tab DPAK T/R

Newark:
MOSFET Transistor, N Channel, 50 A, 60 V, 0.0063 ohm, 10 V, 1.7 V