FDS8962C

双N和P沟道功率沟槽 Dual N & P-Channel Power Trench

General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

■ Q1: N-Channel

   7.0A, 30V RDSon = 0.030Ω @ VGS = 10V

                RDSon = 0.044Ω @ VGS = 4.5V

■ Q2: P-Channel

   -5A, -30V RDSon = 0.052Ω @ VGS = -10V

                 RDSon = 0.080Ω @ VGS = -4.5V

■ Fast switching speed

■ High power and handling capability in a widely used surface mount package