FDS6930A
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDS6930A 双路场效应管, MOSFET, 双N沟道, 5.5 A, 30 V, 0.032 ohm, 10 V, 1.5 V
The is a dual N-channel logic level MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- .
- Fast switching speed
- .
- Low gate charge
- .
- High performance Trench technology for extremely low RDS ON
- .
- High power and current handling capability
- .
- ±20V Gate to source voltage
- .
- 5.5A Continuous drain current
- .
- 20A Pulsed drain current