FDN337N
数据手册.pdfFAIRCHILD SEMICONDUCTOR FDN337N 晶体管, MOSFET, N沟道, 2.2 A, 30 V, 65 mohm, 4.5 V, 700 mV
最大源漏极电压Vds Drain-Source Voltage| 50V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 8V 最大漏极电流Id Drain Current| 2.2A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.065Ω/Ohm @2.2A,4.5V 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.4-1V 耗散功率Pd Power Dissipation| 500mW/0.5W Description & Applications| 2.2 A, 30 V, RDSON = 0.065 W @ VGS = 4.5 V RDSON= 0.082 W @ VGS= 2.5 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOT TM3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDSON Exceptional on-resistance and maximum DC current capability. 描述与应用| 行业标准外形SOT-23表面贴装 包装使用专有SuperSOT 的TM3设计为 卓越的热性能和电气能 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力
