CSD19536KTTT

N 通道 NexFET™ 功率 MOSFET，Texas Instruments### MOSFET 晶体管，Texas Instruments

N 通道 NexFET™ 功率 MOSFET，Texas Instruments

### MOSFET ，Texas Instruments

得捷:
MOSFET N-CH 100V 200A DDPAK

欧时:
### N 通道 NexFET™ 功率 MOSFET，Texas Instruments### MOSFET 晶体管，Texas Instruments

立创商城:
CSD19536KTTT

德州仪器TI:
100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm

艾睿:
Create an effective common drain amplifier using this CSD19536KTTT power MOSFET from Texas Instruments. Its maximum power dissipation is 375000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with nexfet technology.

安富利:
Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 100V; 200A; 375W; D2PAK

Verical:
Trans MOSFET N-CH Si 100V 200A 4-Pin3+Tab DDPAK T/R

Newark:
# TEXAS INSTRUMENTS  CSD19536KTTT  MOSFET Transistor, N Channel, 200 A, 100 V, 0.002 ohm, 10 V, 2.5 V