BVSS84LT1G
数据手册.pdf功率MOSFET的单P沟道SOT- 23 -50 V， 10 ？ Power MOSFET Single P-Channel SOT-23 -50 V, 10
表面贴装型 P 通道 50 V 130mA（Ta） 225mW（Ta） SOT-23-3（TO-236）
立创商城:
BVSS84LT1G
得捷:
MOSFET P-CH 50V 130MA SOT23-3
欧时:
PFET SOT23 50V 130MA 10.0
e络盟:
功率场效应管, MOSFET, P沟道, 50 V, 130 mA, 4.7 ohm, SOT-23, 表面安装
艾睿:
Create an effective common drain amplifier using this BVSS84LT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 225 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Verical:
Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R
Win Source:
MOSFET P-CH 50V 130MA SOT-23-3