BC857CLT3G
数据手册.pdf通用晶体管PNP硅 General Purpose Transistors PNP Silicon
- 双极 BJT - 单 PNP 45 V 100 mA 100MHz 300 mW 表面贴装型 SOT-23-3（TO-236）
得捷:
TRANS PNP 45V 0.1A SOT23-3
立创商城:
BC857CLT3G
艾睿:
The versatility of this PNP BC857CLT3G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R
Verical:
Trans GP BJT PNP 45V 0.1A 300mW 3-Pin SOT-23 T/R