BSS138LT1G

ON SEMICONDUCTOR  BSS138LT1G  晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V

最大源漏极电压Vds Drain-Source Voltage| 50V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 200mA/0.2A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.5-1.5V 耗散功率Pd Power Dissipation| 225mW/0.225W Description & Applications| Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low Threshold Voltage VGSth :0.5 V−1.5 V Makes it Ideal for Low Voltage Applications •Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Packages are Available 描述与应用| 功率MOSFET 200毫安，50 V N沟道SOT-23 典型的应用是DC-DC转换器，电源管理 便携式和电池供电产品，如电脑，打印机， PCMCIA卡，手机和无绳电话。 低阈值电压（VGS（TH） ：0.5 V-1.5 V）使得它非常适合 低电压应用 •微型SOT-23表面贴装封装节省电路板间 •无铅包可用