CSD25302Q2
TI(德州仪器)
分立器件
P 通道 NexFET™ 功率 MOSFET
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on resistance coupled with the extremely small footprint and low profile make the device ideal for battery operated space constrained applications.
- .
- Ultralow Qg and Qgd
- .
- Low Thermal Resistance
- .
- Avalanche Rated
- .
- Pb Free Terminal Plating
- .
- RoHS Compliant
- .
- Halogen Free
- .
- SON 2-mm × 2-mm Plastic Package
- .
- APPLICA ONS
- .
- Battery Management
- .
- Load Management
- .
- Battery Protection
