MGSF1N02LT1

ON SEMICONDUCTOR  MGSF1N02LT1..  晶体管, MOSFET, N沟道, 750 mA, 20 V, 85 mohm, 10 V, 1.7 V

最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20v 最大漏极电流Id Drain Current| 750mA/0.75A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs（th） Gate-Source Threshold Voltage| 1.0-2.4V 耗散功率Pd Power Dissipation| 400mW/0.4W Description & Applications| Power MOSFET 750 mAmps, 20 Volts N–Channel SOT–23 These miniature surface mount MOSFETs low RDSonassure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones • Low RDSon Provides Higher Efficiency and Extends Battery Life • Miniature SOT–23 Surface Mount Package Saves Board Space 描述与应用| 功率MOSFET 750毫安，20伏 N沟道SOT-23 这些微型表面贴装MOSFET的低RDS（ON）保证 最小的功率损耗，节约能源，使这些设备的理想选择 使用空间敏感的电源管理电路。典型 应用的DC-DC转换器，在便携式电源管理 和电池供电产品，如电脑，打印机，PCMCIA 卡，手机和无绳电话 •低的RDS（on） 提供更高的效率和延长电池寿命 •微型SOT-23表面贴装封装节省电路板空间