W631GG6KB-11

DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96Pin WBGA

GENERAL DESCRIPTION

The W631GG6KB is a 1G bits DDR3 SDRAM, organized as 8,388,608 words x 8 banks x 16 bits. This device achieves high speed transfer rates up to 1866 Mb/sec/pin DDR3-1866 for various applications. W631GG6KB is sorted into the following speed grades: -11, -12, 12I, 12A, 12K -15, 15I, 15A and 15K. The -11 speed grade is compliant to the DDR3-1866 13-13-13 specification. The -12, 12I, 12A and 12K speed grades are compliant to the DDR3-1600 11-11-11 specification the 12I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C. The -15, 15I, 15A and 15K speed grades are compliant to the DDR3-1333 9-9-9 specification the 15I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C.

FEATURES

 Power Supply: VDD, VDDQ = 1.5V ± 0.075V

 Double Data Rate architecture: two data transfers per clock cycle

 Eight internal banks for concurrent operation

 8 bit prefetch architecture

 CAS Latency: 6, 7, 8, 9, 10, 11 and 13

 Burst length 8 BL8 and burst chop 4 BC4 modes: fixed via mode register MRS or selectable On The-Fly OTF

 Programmable read burst ordering: interleaved or nibble sequential

 Bi-directional, differential data strobes DQS and DQS# are transmitted / received with data

 Edge-aligned with read data and center-aligned with write data

 DLL aligns DQ and DQS transitions with clock

 Differential clock inputs CK and CK#

 Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair double data rate

 Posted CAS with programmable additive latency AL = 0, CL - 1 and CL - 2 for improved command, address and data bus efficiency

 Read Latency = Additive Latency plus CAS Latency RL = AL + CL

 Auto-precharge operation for read and write bursts

 Refresh, Self-Refresh, Auto Self-refresh ASR and Partial array self refresh PASR

 Precharged Power Down and Active Power Down