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TPS1100D

TPS1100D

TI(德州仪器) 分立器件

单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGSth of -1.5 V and an IDSS of only 0.5 uA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDSon and excellent ac characteristics rise time 10 ns typical make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated PWM controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP PW version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage is especially important where board real estate is at a premium and height restrictions do not allow for a small-outline integrated circuit SOIC package.

Such applications include notebook computers, personal digital assistants PDAs, cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges ESD of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.

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TPS1100D中文资料参数规格
技术参数

额定电压DC -15.0 V

额定电流 -1.60 A

输出电压 -15.0 V

漏源极电阻 0.18 Ω

极性 P-Channel

耗散功率 791 mW

漏源极电压Vds 15 V

连续漏极电流Ids -1.60 A

上升时间 10 ns

额定功率Max 791 mW

下降时间 2 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

耗散功率Max 791mW Ta

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

材质 Silicon

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/06/15

海关信息

香港进出口证 NLR

TPS1100D引脚图与封装图
TPS1100D引脚图

TPS1100D引脚图

TPS1100D封装图

TPS1100D封装图

TPS1100D封装焊盘图

TPS1100D封装焊盘图

在线购买TPS1100D
型号 制造商 描述 购买
TPS1100D TI 德州仪器 单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 搜索库存
替代型号TPS1100D
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: TPS1100D

品牌: TI 德州仪器

封装: SOIC P-Channel -15V -1.6A 180mohms

当前型号

单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

当前型号

型号: TPS1100DR

品牌: 德州仪器

封装: SOIC P-Channel -15V 1.6A

类似代替

单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

TPS1100D和TPS1100DR的区别

型号: TPS1100DG4

品牌: 德州仪器

封装: SOIC P-Channel -15V 1.6A

类似代替

单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

TPS1100D和TPS1100DG4的区别

型号: TPS1100DRG4

品牌: 德州仪器

封装: SOIC P-Channel 15V 1.6A

类似代替

单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

TPS1100D和TPS1100DRG4的区别