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TLC27L1ID

TLC27L1ID

TI(德州仪器) 电子元器件分类

LinCMOSE低功耗运算放大器 LinCMOSE LOW-POWER OPERATIONAL AMPLIFIERS

The TLC27L1 operational amplifier combines a wide range of input offset-voltage grades with low offset-voltage drift and high input impedance. In addition, the TLC27L1 is a low-bias version of the TLC271 programmable amplifier. These devices use the Texas Instruments silicon-gate LinCMOS™ technology, which provides offset-voltage stability far exceeding the stability available with conventional metal-gate processes.

Three offset-voltage grades are available C-suffix and I-suffix types, ranging from the low-cost TLC27L1 10 mV to the TLC27L1B 2 mV low-offset version. The extremely high input impedance and low bias currents, in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available in LinCMOS™ operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC27L1. The devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input-voltage range includes the negative rail.

The device inputs and output are designed to withstand -100-mA surge currents without sustaining latch-up.

The TLC27L1 incorporates internal electrostatic-discharge ESD protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

TLC27L1ID中文资料参数规格
技术参数

输出电流 ≤30 mA

供电电流 14 µA

电路数 1

通道数 1

耗散功率 725 mW

共模抑制比 65dB ~ 94dB

输入补偿漂移 1.10 µV/K

带宽 85.0 kHz

转换速率 30.0 mV/μs

增益频宽积 0.085 MHz

输入补偿电压 1.1 mV

输入偏置电流 0.7 pA

工作温度Max 85 ℃

工作温度Min 40 ℃

增益带宽 0.085 MHz

耗散功率Max 725 mW

共模抑制比Min 65 dB

电源电压Max 16 V

电源电压Min 4 V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

长度 4.9 mm

宽度 3.91 mm

高度 1.58 mm

封装 SOIC-8

物理参数

工作温度 -40℃ ~ 85℃

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

TLC27L1ID引脚图与封装图
TLC27L1ID引脚图

TLC27L1ID引脚图

TLC27L1ID封装图

TLC27L1ID封装图

TLC27L1ID封装焊盘图

TLC27L1ID封装焊盘图

在线购买TLC27L1ID
型号 制造商 描述 购买
TLC27L1ID TI 德州仪器 LinCMOSE低功耗运算放大器 LinCMOSE LOW-POWER OPERATIONAL AMPLIFIERS 搜索库存
替代型号TLC27L1ID
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: TLC27L1ID

品牌: TI 德州仪器

封装: SOIC 8Pin 30mV/us 1Channel

当前型号

LinCMOSE低功耗运算放大器 LinCMOSE LOW-POWER OPERATIONAL AMPLIFIERS

当前型号

型号: TLC27L1AID

品牌: 德州仪器

封装: SOIC 8Pin 30mV/us 1Channel

类似代替

LinCMOS,微功耗运放

TLC27L1ID和TLC27L1AID的区别

型号: TLC27L1BCD

品牌: 德州仪器

封装: SOIC 8Pin 30mV/us 1Channel

类似代替

LinCMOSE低功耗运算放大器 LinCMOSE LOW-POWER OPERATIONAL AMPLIFIERS

TLC27L1ID和TLC27L1BCD的区别

型号: TLC27L1CD

品牌: 德州仪器

封装: SOIC 85kHz 1Channel 8Pin

类似代替

LinCMOSE低功耗运算放大器 LinCMOSE LOW-POWER OPERATIONAL AMPLIFIERS

TLC27L1ID和TLC27L1CD的区别