STB24NM65N

STMICROELECTRONICS  STB24NM65N  功率场效应管, MOSFET, N沟道, 19 A, 650 V, 0.16 ohm, 10 V, 3 V

N 通道 MDmesh™，600V/650V，STMicroelectronics

得捷:
MOSFET N-CH 650V 19A D2PAK

欧时:
STMicroelectronics MDmesh 系列 N沟道 MOSFET 晶体管 STB24NM65N, 19 A, Vds=650 V, 3引脚 D2PAK封装

贸泽:
MOSFET N-Channel 650V 0.16 Ohms 19A

e络盟:
功率场效应管, MOSFET, N沟道, 650 V, 19 A, 0.16 ohm, TO-263 D2PAK, 表面安装

艾睿:
Make an effective common source amplifier using this STB24NM65N power MOSFET from STMicroelectronics. Its maximum power dissipation is 160000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology.

富昌:
STB24NM65N系列 N沟道 650 V 0.16 Ohm MDmesh™ 功率MOSFET - D2PAK

Chip1Stop:
Trans MOSFET N-CH 650V 19A 3-Pin2+Tab D2PAK T/R

Verical:
Trans MOSFET N-CH 650V 19A 3-Pin2+Tab D2PAK T/R

Win Source:
MOSFET N-CH 650V 19A D2PAK