STD10P6F6

P 沟道 STripFET™ 功率 MOSFET，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics

P 沟道 STripFET™ 功率 MOSFET，STMicroelectronics

STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。

### MOSFET ，STMicroelectronics

得捷:
MOSFET P CH 60V 10A DPAK

欧时:
### P 沟道 STripFET™ 功率 MOSFET，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics

立创商城:
P沟道 60V 10A

贸泽:
MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STD10P6F6 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 35000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with stripfet technology.

安富利:
Trans MOSFET P-CH 60V 10A 3-Pin2+Tab DPAK T/R

富昌:
P-沟道 60 V 160 mΩ 6.4 nC 表面贴装 STripFET™ VI DeepGATE™ Mosfet -TO-252

Chip1Stop:
Trans MOSFET P-CH 60V 10A 3-Pin2+Tab DPAK T/R

TME:
Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK

Verical:
Trans MOSFET P-CH 60V 10A 3-Pin2+Tab DPAK T/R

Newark:
# STMICROELECTRONICS  STD10P6F6  MOSFET, P-CH, -60V, -10A, TO-252-3 New

力源芯城:
-60V,0.13Ohm,-10A,P沟道功率MOSFET

DeviceMart:
MOSFET P CH 60V 10A DPAK

Win Source:
MOSFET P CH 60V 10A DPAK