SI3483CDV-T1-GE3
数据手册.pdfVISHAY SI3483CDV-T1-GE3 晶体管, MOSFET, P沟道, -8 A, -30 V, 27 mohm, -10 V, -3 V
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
欧时:
### P 通道 MOSFET,30V 至 80V,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor
艾睿:
Trans MOSFET P-CH 30V 6.1A 6-Pin TSOP T/R
安富利:
Trans MOSFET P-CH 30V 6.1A 6-Pin TSOP T/R
富昌:
Si3483CDV 系列 30 V 8 A 34 mOhm 表面贴装 P沟道 MOSFET - TSOP-6
Verical:
Trans MOSFET P-CH 30V 6.1A 6-Pin TSOP T/R
Newark:
# VISHAY SI3483CDV-T1-GE3 MOSFET Transistor, P Channel, -8 A, -30 V, 27 mohm, -10 V, -3 V