SI2301BDS-T1-E3
数据手册.pdfVISHAY SI2301BDS-T1-E3 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV
The is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
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- 100% Rg tested
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- -55 to 150°C Operating temperature range
欧时:
### P 通道 MOSFET，8V 至 20V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor
e络盟:
VISHAY SI2301BDS-T1-E3 晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV
艾睿:
Trans MOSFET P-CH 20V 2.2A 3-Pin SOT-23 T/R
富昌:
单 P 沟道 20 V 0.1 Ohms 表面贴装 功率 Mosfet - SOT-23
Verical:
Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
Newark:
# VISHAY SI2301BDS-T1-E3 MOSFET Transistor, P Channel, -2.2 A, -20 V, 100 mohm, -4.5 V, -950 mV