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SMUN5114T1G

SMUN5114T1G

数据手册.pdf

数字晶体管( BRT ) R1 = 10千欧, R2 = 47 K· Digital Transistors BRT R1 = 10 k, R2 = 47 k

The PNP digital transistor from is your alternative to traditional BJTs in that it can provide digital signal processing power. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

SMUN5114T1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 PNP

耗散功率 310 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

最大电流放大倍数hFE 80

额定功率Max 202 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 310 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-70-3

外形尺寸

长度 2.1 mm

宽度 1.24 mm

高度 0.85 mm

封装 SC-70-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

SMUN5114T1G引脚图与封装图
暂无图片
在线购买SMUN5114T1G
型号 制造商 描述 购买
SMUN5114T1G ON Semiconductor 安森美 数字晶体管( BRT ) R1 = 10千欧, R2 = 47 K· Digital Transistors BRT R1 = 10 k, R2 = 47 k 搜索库存
替代型号SMUN5114T1G
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: SMUN5114T1G

品牌: ON Semiconductor 安森美

封装: SC-70 PNP 310mW

当前型号

数字晶体管( BRT ) R1 = 10千欧, R2 = 47 K· Digital Transistors BRT R1 = 10 k, R2 = 47 k

当前型号

型号: SMUN5114T3G

品牌: 安森美

封装: SC-70 PNP 310mW

类似代替

SC-70 PNP 50V 100mA

SMUN5114T1G和SMUN5114T3G的区别