SBC807-40LT1G
数据手册.pdf单晶体管 双极, PNP, -45 V, 100 MHz, 300 mW, -500 mA, 40 hFE
- 双极 BJT - 单 PNP 100MHz 表面贴装型 SOT-23-3（TO-236）
欧时:
ON Semiconductor, SBC807-40LT1G
得捷:
TRANS PNP 45V 0.5A SOT23-3
立创商城:
SBC807-40LT1G
e络盟:
单晶体管 双极, PNP, -45 V, 100 MHz, 300 mW, -500 mA, 40 hFE
艾睿:
The PNP SBC807-40LT1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT PNP 45V 0.5A 3-Pin SOT-23 T/R
Chip1Stop:
Trans GP BJT PNP 45V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
Verical:
Trans GP BJT PNP 45V 0.5A 300mW Automotive 3-Pin SOT-23 T/R