MTB50P03HDLT4G

ON SEMICONDUCTOR  MTB50P03HDLT4G.  场效应管, MOSFET, P沟道, -30V, 50A, D2-PAK

P 通道功率 MOSFET，30V 至 500V，

得捷:
MOSFET P-CH 30V 50A D2PAK

立创商城:
MTB50P03HDLT4G

欧时:
ON Semiconductor Si P沟道 MOSFET MTB50P03HDLT4G, 50 A, Vds=30 V, 3引脚 D2PAK封装

贸泽:
MOSFET PFET D2PAK 30V 50A 25mOhm

e络盟:
ON SEMICONDUCTOR  MTB50P03HDLT4G  场效应管, MOSFET, P沟道, -30V, 50A, D2-PAK

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The MTB50P03HDLT4G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 125000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET P-CH 30V 50A 3-Pin2+Tab D2PAK T/R

富昌:
MTB 系列 P沟道 30 V 25 mOhm 125 W 表面贴装 功率MOSFET - D2PAK-3

Verical:
Trans MOSFET P-CH 30V 50A 3-Pin2+Tab D2PAK T/R

Newark:
# ON SEMICONDUCTOR  MTB50P03HDLT4G  MOSFET Transistor, P Channel, 50 A, -30 V, 25 mohm, 5 V, 1.5 V

力源芯城:
-50A,-30V,P沟道功率MOSFET

Win Source:
MOSFET P-CH 30V 50A D2PAK