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MMBT4403M3T5G

MMBT4403M3T5G

数据手册.pdf

PNP开关晶体管 PNP Switching Transistor

Bipolar BJT Transistor PNP 40V 600mA 200MHz 265mW Surface Mount SOT-723


得捷:
TRANS PNP 40V 0.6A SOT723


立创商城:
MMBT4403M3T5G


贸泽:
双极晶体管 - 双极结型晶体管BJT SOT-723 GP PNP TRANS


艾睿:
The versatility of this PNP MMBT4403M3T5G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 640 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.


安富利:
Trans GP BJT PNP 40V 0.6A 3-Pin SOT-723 T/R


Chip1Stop:
Trans GP BJT PNP 40V 0.6A Automotive 3-Pin SOT-723 T/R


Verical:
Trans GP BJT PNP 40V 0.6A Automotive 3-Pin SOT-723 T/R


MMBT4403M3T5G中文资料参数规格
技术参数

频率 200 MHz

极性 PNP

耗散功率 0.64 W

击穿电压集电极-发射极 40 V

集电极最大允许电流 0.6A

最小电流放大倍数hFE 100 @150mA, 2V

额定功率Max 265 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 640 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-723-3

外形尺寸

长度 1.2 mm

宽度 0.8 mm

高度 0.5 mm

封装 SOT-723-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

MMBT4403M3T5G引脚图与封装图
暂无图片
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