MSB92T1G
数据手册.pdfPNP硅通用高压晶体管 PNP Silicon General Purpose High Voltage Transistor
Bipolar BJT Transistor PNP 300V 150mA 50MHz 150mW Surface Mount SC-59
立创商城:
MSB92T1G
得捷:
TRANS PNP 300V 0.15A SC59
贸泽:
Bipolar Transistors - BJT SS HV XSTR PNP 300V
艾睿:
Implement this PNP MSB92T1G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.
Chip1Stop:
Trans GP BJT PNP 300V 0.15A Automotive 3-Pin SC-59 T/R
Win Source:
TRANS PNP 300V 0.15A SC-59