MMBF0201NLT1G
数据手册.pdfON SEMICONDUCTOR MMBF0201NLT1G. 场效应管, MOSFET, N沟道, SOT-23, SMD, 20V
N-Channel 20V 300mA Ta 225mW Ta Surface Mount SOT-23-3 TO-236
欧时:
ON Semiconductor, MMBF0201NLT1G
得捷:
MOSFET N-CH 20V 300MA SOT23-3
立创商城:
MMBF0201NLT1G
贸泽:
MOSFET 20V 300mA N-Channel
e络盟:
ON SEMICONDUCTOR MMBF0201NLT1G. 场效应管, MOSFET, N沟道, SOT-23, SMD, 20V
艾睿:
If you need to either amplify or switch between signals in your design, then ON Semiconductor&s;s MMBF0201NLT1G power MOSFET is for you. Its maximum power dissipation is 225 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 20V 0.3A 3-Pin SOT-23 T/R
Chip1Stop:
Trans MOSFET N-CH 20V 0.3A 3-Pin SOT-23 T/R
TME:
Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Verical:
Trans MOSFET N-CH 20V 0.3A 3-Pin SOT-23 T/R
Newark:
# ON SEMICONDUCTOR MMBF0201NLT1G MOSFET Transistor, N Channel, 300 mA, 20 V, 0.75 ohm, 10 V, 1.7 V
力源芯城:
0.3A,20V,SOT-223-3,N沟道功率MOSFET
Win Source:
MOSFET N-CH 20V 300MA SOT-23