MJD112T4G

ON SEMICONDUCTOR  MJD112T4G.  达林顿晶体管, NPN, 100V, D-PAK

NPN 复合，On Semiconductor

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

欧时:
### NPN 复合晶体管，On Semiconductor### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。### 双极性晶体管，On SemiconductorON Semiconductor 的各种双极晶体管，包括以下类别：小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管

立创商城:
2.0 A, 100 V NPN Darlington Bipolar Power Transistor

得捷:
TRANS NPN DARL 100V 2A DPAK

贸泽:
达林顿晶体管 2A 100V Bipolar Power NPN

e络盟:
ON SEMICONDUCTOR  MJD112T4G.  达林顿晶体管, NPN, 100V, D-PAK

艾睿:
Amplify your current using ON Semiconductor&s;s NPN MJD112T4G Darlington transistor in order to yield a higher current gain. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. This product&s;s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@0.5A@3 V|1000@2A@3V|200@4A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 1750 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.

Allied Electronics:
ON Semi MJD112T4G NPN Darlington Transistor; 4 A 100 V HFE:200; 3-Pin DPAK

安富利:
Trans Darlington NPN 100V 2A 3-Pin2+Tab DPAK T/R

Chip1Stop:
Trans Darlington NPN 100V 2A 3-Pin2+Tab DPAK T/R

Verical:
Trans Darlington NPN 100V 2A 1750mW 3-Pin2+Tab DPAK T/R

Newark:
# ON SEMICONDUCTOR  MJD112T4G  Bipolar BJT Single Transistor, Darlington, NPN, 100 V, 25 MHz, 20 W, 2 A, 1000 hFE

DeviceMart:
TRANS DARL NPN 2A 100V DPAK

Win Source:
TRANS NPN DARL 100V 2A DPAK