LBSS84LT1G
数据手册.pdfLeshan Radio(乐山无线电)
分立器件
MOS场效应管/LBSS84LT1G
最大源漏极电压VdsDrain-Source Voltage | -50V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage | 12V 最大漏极电流IdDrain Current | -0.13A 源漏极导通电阻RdsDrain-Source On-State Resistance | 5.0Ω @100mA,5V 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.8--2.0V 耗散功率PdPower Dissipation | 225mW/0.225W Description & Applications | Power MOSFET 130 mAmps, 50 Volts P-Channel SOT-23 Energy Efficient Miniature SOT-23 Surface Mount Package Saves Board Space 描述与应用 | 功率MOSFET 130毫安，50伏 P沟道SOT-23 高效节能 微型SOT-23表面贴装封装节省电路板空间
立创商城:
P沟道 50V 130mA
安富利:
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Win Source:
Power MOSFET F30 mAmps, 50 Volts