PHP21N06T、PSMN004-60P、BUZ10L对比区别

高亮显示差异参数

型号 PHP21N06T PSMN004-60P BUZ10L

描述 Power Field-Effect TransistorN沟道增强模式音响场效晶体管 N-channel enhancement mode field-effect transistorSIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

数据手册 ---

制造商 Nexperia (安世) NXP (恩智浦) Siemens Semiconductor (西门子)

分类

安装方式 - Through Hole -

封装 - TO-220-3 -

极性 - N-CH -

漏源极电压(Vds) - 60 V -

连续漏极电流(Ids) - 75A -

输入电容(Ciss) - 8300pF @25V(Vds) -

额定功率(Max) - 230 W -

封装 - TO-220-3 -

工作温度 - -55℃ ~ 175℃ (TJ) -

产品生命周期 Active Unknown Obsolete

包装方式 - Tube -

RoHS标准 RoHS Compliant RoHS Compliant -

含铅标准 - Lead Free -