PMZ290UNE2YL、PMZ290UNYL对比区别

高亮显示差异参数

型号 PMZ290UNE2YL PMZ290UNYL

描述 N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. DFN1006-3: leadless ultra small plastic package; 3 solder landsTrans MOSFET N-CH 20V 1A 3Pin DFN T/R

数据手册 --

制造商 NXP (恩智浦) NXP (恩智浦)

分类 MOS管MOS管

安装方式 Surface Mount Surface Mount

封装 DFN1006-3 SOT-883

耗散功率 350mW (Ta), 5.43W (Tc) -

漏源极电压(Vds) 20 V -

输入电容(Ciss) 46pF @10V(Vds) -

耗散功率(Max) 350mW (Ta), 5.43W (Tc) -

封装 DFN1006-3 SOT-883

工作温度 -55℃ ~ 150℃ (TJ) -

产品生命周期 Pre-Release Active

包装方式 Tape & Reel (TR) Tape & Reel (TR)

RoHS标准 RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free