HY27US08561A-TPCB、TC58DVM82A1FTI0、NAND256W3A0BN6F对比区别

高亮显示差异参数

型号 HY27US08561A-TPCB TC58DVM82A1FTI0 NAND256W3A0BN6F

描述 NAND Flash 3.3V 265Mbit 32M x 8Bit 12000ns 48Pin TSOP-IIC 32M X 8 EEPROM 3V, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48, Programmable ROMFlash, 32MX8, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

数据手册 ---

制造商 SK Hynix (海力士) Toshiba (东芝) Numonyx

分类 Flash芯片

安装方式 Surface Mount - -

封装 TSOP1 TSOP1 TSOP1

封装 TSOP1 TSOP1 TSOP1

工作温度 0℃ ~ 70℃ - -

产品生命周期 Obsolete Obsolete Unknown

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free -