SPB80N10L、SPP80N10L、SPB80N10LG对比区别

高亮显示差异参数

型号 SPB80N10L SPP80N10L SPB80N10LG

描述 SIPMOS功率三极管 SIPMOS Power-TransistorSIPMOS功率三极管 SIPMOS Power-TransistorPower Field-Effect Transistor, 80A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

数据手册 ---

制造商 Infineon (英飞凌) Infineon (英飞凌) Infineon (英飞凌)

分类 MOS管MOS管MOS管

安装方式 Surface Mount Through Hole Through Hole

封装 TO-263-3-2 TO-220-3-1 TO-263

额定电压(DC) 100 V 100 V 100 V

额定电流 80.0 A 80.0 A 80.0 A

极性 N-CH N-CH -

耗散功率 250W (Tc) 250W (Tc) -

输入电容 4.54 nF 4.54 nF 4.54 nF

栅电荷 240 nC 240 nC 240 nC

漏源极电压(Vds) 100 V 100 V 100 V

连续漏极电流(Ids) 80.0 A 80.0 A 80.0 A

输入电容(Ciss) 4540pF @25V(Vds) 4540pF @25V(Vds) 4540pF @25V(Vds)

耗散功率(Max) 250W (Tc) 250W (Tc) -

额定功率(Max) - - 250 W

封装 TO-263-3-2 TO-220-3-1 TO-263

工作温度 -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ) -

产品生命周期 Obsolete Obsolete Obsolete

包装方式 Tape Tube Cut Tape (CT)

RoHS标准 Non-Compliant RoHS Compliant RoHS Compliant

含铅标准 Contains Lead Lead Free Lead Free