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SPB80N10L、SPB80N10LG、SPP80N10L对比区别

P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 SPB80N10L SPB80N10LG SPP80N10L

描述 SIPMOS功率三极管 SIPMOS Power-TransistorPower Field-Effect Transistor, 80A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, 3 PINSIPMOS功率三极管 SIPMOS Power-Transistor

数据手册 ---

制造商 Infineon (英飞凌) Infineon (英飞凌) Infineon (英飞凌)

分类 MOS管MOS管MOS管

基础参数对比

安装方式 Surface Mount Through Hole Through Hole

封装 TO-263-3-2 TO-263 TO-220-3-1

额定电压(DC) 100 V 100 V 100 V

额定电流 80.0 A 80.0 A 80.0 A

极性 N-CH - N-CH

耗散功率 250W (Tc) - 250W (Tc)

输入电容 4.54 nF 4.54 nF 4.54 nF

栅电荷 240 nC 240 nC 240 nC

漏源极电压(Vds) 100 V 100 V 100 V

连续漏极电流(Ids) 80.0 A 80.0 A 80.0 A

输入电容(Ciss) 4540pF @25V(Vds) 4540pF @25V(Vds) 4540pF @25V(Vds)

耗散功率(Max) 250W (Tc) - 250W (Tc)

额定功率(Max) - 250 W -

封装 TO-263-3-2 TO-263 TO-220-3-1

工作温度 -55℃ ~ 175℃ (TJ) - -55℃ ~ 175℃ (TJ)

产品生命周期 Obsolete Obsolete Obsolete

包装方式 Tape Cut Tape (CT) Tube

RoHS标准 Non-Compliant RoHS Compliant RoHS Compliant

含铅标准 Contains Lead Lead Free Lead Free