IPL60R385CPAUMA1

INFINEON  IPL60R385CPAUMA1  功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V

CoolMOS™CP 功率 MOSFET

得捷:
MOSFET N-CH 600V 9A 4VSON

立创商城:
N沟道 600V 9A

欧时:
Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPL60R385CPAUMA1, 9 A, Vds=600 V, 4引脚 VSON封装

艾睿:
Make an effective common gate amplifier using this IPL60R385CPAUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 83000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -40 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology.

TME:
Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4

Verical:
Trans MOSFET N-CH 650V 9A 4-Pin VSON T/R

Newark:
# INFINEON  IPL60R385CPAUMA1  Power MOSFET, N Channel, 9 A, 650 V, 0.35 ohm, 10 V, 3 V