A2T27S020GNR1
射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V
Overview
The A2T27S020NR1 and 2.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.
MoreLess
## Features
* Greater negative gate-source voltage range for improved Class C operation
* Designed for digital predistortion error correction systems
* Universal broadband driver
* RoHS compliant
## Features RF Performance Tables
### 1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
1805 MHz| 20.8| 20.9| 9.4| –44.6| –9
1840 MHz| 21.1| 20.9| 9.3| –45.6| –16
1880 MHz| 20.7| 20.6| 9.1| –45.5| –13
### 2100 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
2110 MHz| 19.1| 19.8| 9.1| –45.4| –10
2140 MHz| 19.6| 19.6| 9.0| –45.3| –14
2170 MHz| 19.4| 19.6| 8.8| –44.5| –12
### 2600 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 185 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
2575 MHz| 17.2| 19.4| 9.3| –46.4| –8
2605 MHz| 17.8| 19.5| 9.0| –44.5| –10
2635 MHz| 17.2| 19.4| 8.7| –43.4| –7