IMH21

IMH21 NPN+NPN复合带阻尼三极管 20V 600mA R1=10KΩ HEF=820~27000 300mW/0.3W SOT-163/SMT6/SC-74 标记H21 开关电路 逆变器 接口电路 驱动电路

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 20V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 20V 集电极连续输出电流IC Collector CurrentIC | 600mA Q1基极输入电阻R1 Input ResistanceR1 | 10KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | Q1电阻比R1/R2 Q1 Resistance Ratio | Q2基极输入电阻R1 Input ResistanceR1 | 10KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | Q2电阻比R1/R2 Q2 Resistance Ratio | 直流电流增益hFE DC Current GainhFE | 820~27000 截止频率fT Transtion FrequencyfT | 150MHz 耗散功率Pc Power Dissipation | 300mW/0.3W Description & Applications | Features •Dual digital transistors •Low saturation voltage, typically VCE sat =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. •These transistors can be used at high current levels, IC=600mA. •Two DTC614T chips in a SMT package. 描述与应用 | 特点 •双数字晶体管 •低饱和电压，通常VCE（sat）的IC / IB=40mV在=50毫安/2.5毫安，使得这些晶体管的理想选择静音电路。 •这些晶体管可用于大电流的水平，IC =600毫安。 •两个DTC614T的芯片在SMT包装。