RJH60M3DPP-M0#T2

IGBT 晶体管 IGBT

The IGBT transistor from Renesas is the best electronic switch for fast switching. Its maximum power dissipation is 39700 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with trench technology. It is made in a single configuration.