SI7252DP-T1-GE3
VISHAY SI7252DP-T1-GE3 双路场效应管, MOSFET, 双N沟道, 36.7 A, 100 V, 0.014 ohm, 10 V, 1.5 V
The is a 100V Dual N-channel TrenchFET® Power MOSFET. Suitable for use in primary side switching and DC/AC inverters applications and also used in synchronous rectification circuits.
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- Halogen-free according to IEC 61249-2-21 definition
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- 100% Rg Tested
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- 100% UIS Tested
