2SD1782K
2SD1782K NPN三极管 80V 500mA/0.5A 180MHz 120~270 200mV/0.2V SOT-23/SC-59/SMT3 marking/标记 AJQ
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO | 80V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO | 80V 集电极连续输出电流ICCollector CurrentIC | 500mA/0.5A 截止频率fTTranstion FrequencyfT | 180MHz 直流电流增益hFEDC Current GainhFE | 180~390 管压降VCE(sat)Collector-Emitter Saturation Voltage | 200mV/0.2V 耗散功率PcPower Dissipation | 200mW/0.2W Description & Applications | Features- .
- Low VCEsat. VCEsat = 0.2V Typ. IC / IB = 0.5A / 50mA * High VCEO, VCEO = 80V Structure Epitaxial planar type NPN silicon transistor 描述与应用 | 特点 *低VCE(sat)的。 VCE(饱和)=0.2V (IC / IB= 0.5A/50MA) *高VCEO VCEO=80V 结构 外延平面型 NPN硅